Sputtering target and manufacturing method therefor
US9704695B2 · kind B2 · utility
2Cited by
12References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.