Method of making a semiconductor device formed by thermal annealing
US9704712B1 · kind B1 · utility
1Cited by
5References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a method may include: structuring a semiconductor region to form a structured surface of the semiconductor region; disposing a dopant in the semiconductor region; and activating the dopant at least partially by irradiating the structured surface at least partially with electromagnetic radiation having at least one discrete wavelength to heat the semiconductor region at least partially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.