Method for controlling surface charge on wafer surface in semiconductor fabrication
US9704714B2 · kind B2 · utility
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2References
21Claims
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Key dates
| Filing date | Apr 16, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Apr 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.