Semiconductor device and method for fabricating the same
US9704737B2 · kind B2 · utility
7Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2015 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Sep 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a plurality of spacers on the first region, the second region, and the third region; forming a first patterned mask to cover the spacers on the first region and the second region; and removing the spacers on the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.