Patent · US Active

Method of dicing a wafer

US9704748B2 · kind B2 · utility

2Cited by

0References

35Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Ortner · Finkenstein, AT
Michael Roesner · Villach, AT
Gudrun Stranzl · Eisenlohrsweg, AT
Rudolf Rothmaler · Villach, AT

Key dates

Filing date	Jun 25, 2015
Grant date	Jul 11, 2017
Priority date	—
Expiry date	Jun 25, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3083
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.