Patent · US Active

Nanotube structure based metal damascene process

US9704800B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ravi Keshav Joshi · Klagenfurt, AT
Juergen Steinbrenner · Zistersdorf, AT

Key dates

Filing date	Aug 27, 2015
Grant date	Jul 11, 2017
Priority date	—
Expiry date	Aug 27, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.