Resistive random access memory containing a steering element and a tunneling dielectric element

US9704920B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Abhijit Bandyopadhyay · San Jose, US
• Venkatagirish Nagavarapu · 红钢城街道, CN
• Xiao-min Li · Moriyama, JP
• Zhida Lan · San Jose, US
• Michael Konevecki · San Jose, US

Key dates

• Filing date: Oct 27, 2015
• Grant date: Jul 11, 2017
• Expiry date: Oct 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A memory device includes at least one memory cell. The at least one memory cell includes a steering element, a resistive memory element, and a tunneling dielectric element located between the steering element and the resistive memory element.