Carrier substrate and method for producing semiconductor chips

US9704945B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Ewald Karl Michael Günther · Regenstauf, DE
• Andreas Plö;l · Regensburg, DE
• Heribert Zull · Regensburg, DE
• Thomas Nicolas Emmanuel Veit · Leipzig, DE
• Mathias Kämpf · Burglengenfeld, DE
• Jens Dennemarck · Regensburg, DE
• Bernd Böhm · Regensburg, DE
• Korbinian Perzlmaier · Regensburg, DE

Key dates

• Filing date: Feb 7, 2012
• Grant date: Jul 11, 2017
• Expiry date: Apr 29, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.