Semiconductor device and a method for forming a semiconductor device

US9704954B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Daniel Tutuc · Finkenstein, AT
• Franz Hirler · Isen, DE
• Andreas Voerckel · Finkenstein, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Feb 11, 2016
• Grant date: Jul 11, 2017
• Expiry date: Feb 11, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type. Further, the at least one strip-shaped cell compensation region is connected to a first electrode structure of the vertical electrical element arrangement. The at least one strip-shaped edge compensation region extends into the semiconductor substrate within an edge termination region of the semiconductor device and outside the cell region. Further, the at least one strip-shaped edge compensation region comprises the first conductivity type. The bridge structure electrically connects the at least one strip-shaped edge compensation region with the at least one strip-shaped cell compensation region within the edge termination region.