Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing

US9704984B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Daniel Tutuc · Finkenstein, AT
• Andreas Voerckel · Finkenstein, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Apr 27, 2016
• Grant date: Jul 11, 2017
• Expiry date: Apr 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/111

Abstract

A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active cell area. An inner part of the junction termination area is arranged between an outer part of the junction termination area and the active cell area. A charge compensation device structure includes first regions of a first conductivity type and second regions of a second conductivity type disposed alternately along a first lateral direction. First surface areas correspond to a projection of the first regions onto the first surface, and second surface areas correspond to a projection of the second regions onto the first surface. The super-junction semiconductor device further includes at least one of a first junction termination extension structure and a second junction termination extension structure.