Dynamic threshold voltage compaction for non-volatile memory
US9711211B2 · kind B2 · utility
2Cited by
54References
20Claims
0Family size
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Key dates
| Filing date | Oct 29, 2015 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Oct 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Based on performance during programming, the non-volatile memory cells are classified as fast programming memory cells and slow programming memory cells (or other classifications). At a separate time for each programmed state, threshold voltage distributions are compacted based on the classification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.