Non-volatile memory with in field failure prediction using leakage detection

US9711227B1 · kind B1 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Ashish Ghai · San Jose, US
• Yuvaraj Krishnamoorthy · San Jose, US
• Ekamdeep Singh · Indianapolis, US
• Kalpana Vakati · Boise, US
• Maythin Uthayopas · San Jose, US
• Mark Shlick · Ganei Tikva, IL
• Srikar Peesari · San Jose, US

Key dates

• Filing date: Apr 28, 2016
• Grant date: Jul 18, 2017
• Expiry date: Apr 28, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2029/5006
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

To prevent data loss due to latent defects, a non-volatile memory system will use a leakage detection circuit to test for small amounts of leakage that indicate that the memory is susceptible to failure.