Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9711334B2 · kind B2 · utility
13Cited by
31References
13Claims
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Key dates
| Filing date | Sep 19, 2013 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1317
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.