Patent · US Active

Backing plate-integrated metal sputtering target and method of producing same

US9711336B2 · kind B2 · utility

0Cited by
1References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 5, 2014
Grant dateJul 18, 2017
Priority date
Expiry dateSep 5, 2034

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB21K23/04
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Provided is a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging. By increasing the mechanical strength of only the flange part of the target in a backing plate-integrated sputtering target as described above, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.