Process for densifying nitride film

US9711351B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Bert Jongbloed · Oud-Heverlee, BE
• Dieter Pierreux · Dilbeek, BE

Key dates

• Filing date: Aug 19, 2015
• Grant date: Jul 18, 2017
• Expiry date: Aug 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some embodiments, a nitride film is provided over a semiconductor substrate and densified. The nitride film may be a flowable nitride, which may be deposited to at least partially fill openings in the substrate. Densifying the film is accomplished without exposing the nitride film to plasma by exposing the nitride film to a non-plasma densifying agent in the process chamber. The non-plasma densifying agent may be a nitriding gas, a hydrogen scavenging gas, a silicon precursor, or a combination thereof.