Pinned photodiode with a low dark current
US9711550B2 · kind B2 · utility
7Cited by
3References
18Claims
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Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing a pinned photodiode, including: forming a region of photon conversion into electric charges of a first conductivity type on a substrate of the second conductivity type; coating said region with a layer of a heavily-doped insulator of the second conductivity type; and annealing to ensure a dopant diffusion from the heavily-doped insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.