Semiconductor image sensor structure having metal-filled trench contact
US9711556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Jul 18, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.