Thin-sheet FinFET device

US9711647B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Mark van Dal · Linden, BE
• Martin Christopher Holland · Leuven, BE
• Matthias Passlack · Overijse, BE

Key dates

• Filing date: Jun 13, 2014
• Grant date: Jul 18, 2017
• Expiry date: Mar 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A thin-sheet non-planar circuit device such as a FinFET and a method for forming the device is disclosed. In some exemplary embodiments, the device includes a substrate having a top surface and a feature disposed on the substrate that extends above the top surface. A material layer disposed on the feature. The material layer includes a plurality of source/drain regions and a channel region disposed between the source/drain regions. A gate stack is disposed on the channel region of the material layer. In some such embodiments, the feature includes a plurality of side surfaces, and the material layer is disposed on each of the side surface surfaces. In some such embodiments, the feature also includes a top surface and the material layer is further disposed on the top surface. In some embodiments, the top surface of the feature is free of the material layer.