Wafer shape thickness and trench measurement
US9714825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2011 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.