Wafer-based light source parameter control
US9715180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2014 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.