Methods of selective layer deposition

US9716012B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Huixiong Dai · San Jose, US
• Patrick M. Martin · Ipswich, US
• Timothy Michaelson · Austin, US
• Kadthala Ramaya Narendrnath · San Jose, US
• Robert Jan Visser · Menlo Park, US
• Jingjing Xu · Eden Prairie, US
• Lin Zhang · Qiaonanxiang, CN

Key dates

• Filing date: Dec 4, 2014
• Grant date: Jul 25, 2017
• Expiry date: Dec 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76849
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.