Fin field effect transistor
US9716091B2 · kind B2 · utility
3Cited by
83References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.