Schottky device having conductive trenches and a multi-concentration doping profile therebetween
US9716151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2014 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.