Semiconductor device with electric field relaxation portion in insulating layer between lower and upper trench electrodes
US9716152B2 · kind B2 · utility
3Cited by
3References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 23, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.