FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same

US9716176B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Mark S. Rodder · Dallas, US
• Borna J. Obradovic · Leander, US
• Robert C. Bowen · Lucas, US

Key dates

• Filing date: Nov 6, 2014
• Grant date: Jul 25, 2017
• Expiry date: Feb 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, and a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin opposite the first side.