RRAM device and method for manufacturing the same
US9716223B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Jul 25, 2017 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
A resistive random access memory device includes a bottom electrode, a plurality of memory stacks separately formed over the bottom electrode, a third oxygen diffusion barrier layer formed between the memory stacks, and a top electrode formed over the plurality of memory stacks and the third oxygen diffusion barrier layer. Each of the plurality of memory stacks includes a resistive switching layer formed over the bottom electrode, a first oxygen diffusion barrier layer formed over the resistive switching layer, a conductive oxygen reservoir layer formed over the first oxygen diffusion barrier layer, and a second oxygen diffusion barrier layer formed over the conductive oxygen reservoir layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.