Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

US9716225B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Tsz W. Chan · Boise, US
• D. V. Nirmal Ramaswamy · Boise, US
• Qian Tao · Singapore, SG
• Yongjun Jeff Hu · Boise, US
• Everett A. McTeer · Eagle, US

Key dates

• Filing date: Sep 3, 2014
• Grant date: Jul 25, 2017
• Expiry date: Sep 3, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.