System and apparatus for flowable deposition in semiconductor fabrication
US9719169B2 · kind B2 · utility
19Cited by
124References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | May 1, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.