Method of writing to a spin torque magnetic random access memory
US9721637B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 27, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | May 30, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for determining an optimized write pattern for low write error rate operation of a spin torque magnetic random access memory. The method provides a way to optimize the write error rate without affecting the memory speed. The method comprises one or more write pulses. The pulses may be independent in amplitude, duration and shape. Various exemplary embodiments adjust the write pattern based on the memory operating conditions, for example, operating temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.