Boosting a digit line voltage for a write operation
US9721638B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1697
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. The magnitude of a voltage applied across a ferroelectric capacitor may be dynamically increased during a write operation. For example, a memory cell may be selected for a write operation, and a voltage may be applied to a digit line corresponding to the memory cell during the write operation. An additional charge may be transferred to the digit line—e.g., from an energy storage component, such as a capacitor, that is in electronic communication with the digit line. In turn, the voltage across the ferroelectric capacitor of the memory cell may be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.