Method and apparatus for shaping a gas profile near bevel edge
US9721782B2 · kind B2 · utility
1Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2011 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.