Three-dimensional memory device having a transition metal dichalcogenide channel
US9721963B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithic three-dimensional memory device contains a high mobility metal dichalcogenide channel. A stack of alternating layers comprising first material layers and second material layers is formed over a substrate. A memory opening is formed through the stack of alternating layers. A memory film is formed in the memory opening. A metal dichalcogenide channel is formed on an inner sidewall of the memory film. A dielectric core is formed within the metal dichalcogenide channel. A stack of titanium and gold may be employed to form a drain region to enhance contact. A hafnium oxide, aluminum oxide or hafnium aluminum oxide hafnium aluminum oxide layer may be employed on either side, or on both sides, of the metal dichalcogenide channel to enhance the mobility of electrons in the metal dichalcogenide channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.