Image sensor manufacturing methods
US9721984B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2012 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | May 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.