Metal cap protection layer for gate and contact metallization
US9722038B2 · kind B2 · utility
6Cited by
20References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 11, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMOS fabrication process provides metal gates and contact metallization protected by metal cap layers resistant to reagents employed in downstream processing. Cobalt gates and contact metallization are accordingly feasible in CMOS processing requiring downstream wet cleans and etch processes that would otherwise compromise or destroy them. Low resistivity metal cap materials can be employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.