Methods for forming crystalline IGZO with a seed layer
US9722049B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
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