Bipolar junction transistors with a buried dielectric region in the active device region
US9722057B2 · kind B2 · utility
8Cited by
19References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Aug 1, 2017 |
| Priority date | — |
| Expiry date | Sep 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structure and fabrication methods for a bipolar junction transistor. A trench isolation region is formed that bounds an active device region along a sidewall. A dielectric region is formed that extends laterally from the sidewall of the active device region into the active device region. The dielectric region is located beneath a top surface of the active device region such that a section of the active device region is located between the top surface and the dielectric region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.