Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9725799B2 · kind B2 · utility
12Cited by
31References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2014 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Dec 5, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.