Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen

US9728395B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Helmut Oefner · Zorneding, DE
• Nico Caspary · Munich, DE
• Mohammad Momeni · Villach, AT
• Reinhard Ploss · Munich, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Sep 28, 2015
• Grant date: Aug 8, 2017
• Expiry date: Sep 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.