Method for processing base body to be processed
US9728417B2 · kind B2 · utility
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5References
8Claims
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Assignee
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Key dates
| Filing date | Nov 9, 2012 |
| Grant date | Aug 8, 2017 |
| Priority date | — |
| Expiry date | Nov 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.