High aspect ratio patterning of hard mask materials by organic soft masks

US9728421B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Markus Brink · White Plains, US
• Sebastian U. Engelmann · White Plains, US
• Eric A. Joseph · White Plains, US
• Hiroyuki Miyazoe · White Plains, US

Key dates

• Filing date: Dec 31, 2015
• Grant date: Aug 8, 2017
• Expiry date: Dec 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02321
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of etching a pattern into a dielectric layer is provided. An organic planarization layer having a pattern is provided atop a dielectric layer. A cyclic fluorocarbon deposition step and plasma step is performed to etch the pattern into the dielectric layer. The energy for the plasma step is kept below the etch threshold of the dielectric layer.