Electronic device including a polycrystalline compound semiconductor layer and a process of forming the same

US9728629B1 · kind B1 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Abhishek Banerjee · Houston, US
• Aurore CONSTANT · Oudenaarde, BE
• Peter Moens · Zottegem, BE
• Brice De Jaeger · Leuven, BE

Key dates

• Filing date: Jul 14, 2016
• Grant date: Aug 8, 2017
• Expiry date: Jul 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

An electronic device can include a substrate having a primary surface; a monocrystalline semiconductor film overlying the primary surface of the substrate; and a polycrystalline compound semiconductor layer adjacent to the monocrystalline semiconductor film. In an embodiment, the polycrystalline compound semiconductor layer has a dopant concentration at most 1×1016 atoms/cm3, a donor concentration of greater than 1×1017 donors/cm3, and is part of a contact of an electrode of a transistor. In another embodiment, the electronic device can further include an interconnect over the polycrystalline compound semiconductor layer, wherein a combination of the interconnect and polycrystalline compound semiconductor layer form an ohmic contact. In a further embodiment, a polycrystalline compound semiconductor layer can be adjacent to the monocrystalline semiconductor film, wherein an energy level of a conduction band of the polycrystalline compound semiconductor layer is lower than its Fermi energy level.