Ruthenium-alloy sputtering target
US9732413B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 16, 2006 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Aug 8, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22C5/04
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.