Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US9735009B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Sep 4, 2015 |
| Grant date | Aug 15, 2017 |
| Priority date | — |
| Expiry date | Nov 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.