Patent · US Active

Short-channel nFET device

US9735012B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Chi Dong Nguyen · Munich, DE
Klaus Hempel · Dresden, DE

Key dates

Filing date	Mar 25, 2015
Grant date	Aug 15, 2017
Priority date	—
Expiry date	May 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor device is provided including co-implanting a halo species and carbon in a semiconductor layer with a finite tilt angle with respect to a direction perpendicular to the surface of the semiconductor layer. Furthermore, a semiconductor device is provided including an N-channel transistor comprising a halo region made of a halo species with a dopant profile formed in a semiconductor layer and a carbon species implanted in the semiconductor layer with substantially the same dopant profile as the dopant profile of the halo region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.