Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device

US9735245B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Harry-Hak-Lay Chuang · Austin, US
• Wei-Cheng Wu · Hengshan, TW
• Shih-Chang Liu · Guanmiao, TW
• Ya-Chen Kao · Taoyuan, TW

Key dates

• Filing date: Sep 10, 2014
• Grant date: Aug 15, 2017
• Expiry date: Sep 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

Some embodiments of the present disclosure provide an integrated circuit (IC) for an embedded flash memory device. The IC includes a flash memory cell having a memory cell gate. A silicide contact pad is arranged in a recess of the memory cell gate. A top surface of the silicide contact pad is recessed relative to a top surface of the memory cell gate. Dielectric side-wall spacers extend along sidewalls of the recess from the top surface of the memory cell gate to the top surface of the silicide contact pad.