Patent · US Active

RF power delivery regulation for processing substrates

US9741539B2 · kind B2 · utility

4Cited by
28References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 19, 2015
Grant dateAug 22, 2017
Priority date
Expiry dateOct 19, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.