Hybrid stair-step etch
US9741563B2 · kind B2 · utility
9Cited by
21References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jan 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.