RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features
US9741673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.