Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices
US9741720B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2016 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Jul 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate, n-type and p-type FinFETs on the substrate, each of the n-type and the p-type FinFETs include a channel region and a gate structure surrounding the channel region, each gate structure having a phase-changed high-k gate dielectric layer lining a gate trench thereof, the gate trench defined by a pair of spacers. The semiconductor structure further includes a conformal dielectric capping layer over each phase-changed high-k gate dielectric layer, the conformal dielectric capping layer having a higher dielectric constant than the phase-changed high-k gate dielectric layer. Further included on the n-type FinFETs is a multi-layer replacement gate stack of n-type work function material over the phase-changed high-k gate dielectric layer. A method of fabricating the semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.