Manufacturing method of semiconductor structure for improving quality of epitaxial layers
US9741818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2015 |
| Grant date | Aug 22, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor structure for improving quality of an epitaxial layer is provided in the present invention. The manufacturing method includes the following steps. A gate structure is formed on a semiconductor substrate, and two lightly doped regions are formed in the semiconductor substrate at two sides of the gate structure. A capping layer is formed on the gate structure and the lightly doped regions. Two epitaxial layers are formed at the two sides of the gate structure after the step of forming the capping layer. An oxide film formed on the lightly doped regions will influence the growth condition of the epitaxial layers. A removing process is performed to remove the oxide film on the lightly doped regions before the step of forming the capping layer so as to improve the quality of the epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.